features trenchfet power mosfet new low thermal resistance powerpak package with low 1.07-mm profile 100% r g tested applications dc/dc conversion logic level SI7944DP vishay siliconix new product document number: 72358 s-31609?rev. a, 11-aug-03 www.vishay.com 1 dual n-channel 30-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 30 0.0095 @ v gs = 10 v 15.3 30 0.016 @ v gs = 4.5 v 11.8 n-channel mosfet d 1 g 1 s 1 n-channel mosfet d 2 g 2 s 2 1 2 3 4 5 6 7 8 s1 g1 s2 g2 d1 d1 d2 d2 6.15 mm 5.15 mm bottom view powerpak so-8 ordering information: SI7944DP-t1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 10 secs steady state unit drain-source voltage v ds 30 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a t a = 25 c i d 15.3 9.8 continuous drain current (t j = 150 c) a t a = 85 c i d 11.0 7.1 a pulsed drain current i dm 30 a continuous source current (diode conduction) a i s 3 1.2 maximum power dissipation a t a = 25 c p d 3.6 1.5 w maximum power dissipation a t a = 85 c p d 1.9 0.8 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 10 sec r 26 35 maximum junction-to-ambient a steady state r thja 60 85 c/w maximum junction-to-case (drain) steady state r thjc 2.5 3.1 c/w notes a. surface mounted on 1? x 1? fr4 board.
SI7944DP vishay siliconix new product www.vishay.com 2 document number: 72358 s-31609?rev. a, 11-aug-03 mosfet specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 3 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 30 v, v gs = 0 v, t j = 85 c 5 a on-state drain current no tag i d(on) v ds 5 v, v gs = 10 v 30 a drain - source on - state resistance no tag r ds(on) v gs = 10 v, i d = 15.3 a 0.0075 0.0095 d ra i n- s ource o n- st a t e r es i s t ance no tag r ds(on) v gs = 4.5 v, i d = 11.8 a 0.013 0.016 forward transconductance no tag g fs v ds = 10 v, i d = 15.3 a 32 s diode forward voltage no tag v sd i s = 3 a, v gs = 0 v 0.8 1.2 v dynamic no tag total gate charge q g 13.5 21 gate-source charge q gs v ds = 15 v, v gs = 4.5 v, i d = 15.3 a 7.1 nc gate-drain charge q gd 4.7 gate resistance r g 0.5 1.0 1.7 turn-on delay time t d(on) 10 15 rise time t r v dd = 15 v, r l = 15 10 15 turn-off delay time t d(off) v dd = 15 v , r l = 15 i d 1 a, v gen = 10 v, r g = 6 40 60 ns fall time t f 12 20 source-drain reverse recovery time t rr i f = 2.3 a, di/dt = 100 a/ s 45 70 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 6 12 18 24 30 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v gs = 10 thru 5 v t c = 125 c -55 c 3 v 25 c output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d 4 v
SI7944DP vishay siliconix new product document number: 72358 s-31609?rev. a, 11-aug-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 - on-resistance ( r ds(on) ) 0 600 1200 1800 2400 0 6 12 18 24 30 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 0 2 4 6 8 10 0 5 10 15 20 25 30 0.000 0.006 0.012 0.018 0.024 0.030 0 6 12 18 24 30 v ds - drain-to-source voltage (v) c oss c iss v ds = 15 v i d = 15.3 a i d - drain current (a) v gs = 10 v i d = 15.3 a v gs = 10 v gate charge on-resistance vs. drain current - gate-to-source voltage (v) q g - total gate charge (nc) c - capacitance (pf) v gs capacitance on-resistance vs. junction t emperature t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) 0.00 0.01 0.02 0.03 0.04 0.05 0.06 0246810 t j = 150 c i d = 15.3 a 30 10 1 source-drain diode forward v oltage on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) v sd - source-to-drain voltage (v) v gs - gate-to-source voltage (v) - source current (a) i s t j = 25 c v gs = 4.5 v c rss i d = 3 a
SI7944DP vishay siliconix new product www.vishay.com 4 document number: 72358 s-31609?rev. a, 11-aug-03 typical characteristics (25 c unless noted) - 1.0 - 0.8 - 0.6 - 0.4 - 0.2 - 0.0 0.2 0.4 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a threshold v oltage variance (v) v gs(th) t j - temperature ( c) safe operating area v ds - drain-to-source voltage (v) 100 1 0.1 1 10 100 0.01 10 t a = 25 c single pulse - drain current (a) i d p(t) = 10 dc 0.1 i d(on) limited r ds(on) limited bv dss limited p(t) = 1 p(t) = 0.1 p(t) = 0.01 p(t) = 0.001 i dm limited 0 30 40 10 20 power (w) single pulse power time (sec) 1 100 600 10 10 -1 10 -2 10 -3 10 -2 1 10 600 10 -1 10 -4 100 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 1. duty cycle, d = 2. per unit base = r thja = 60 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm p(t) = 0.0001
SI7944DP vishay siliconix new product document number: 72358 s-31609?rev. a, 11-aug-03 www.vishay.com 5 typical characteristics (25 c unless noted) 0.1 10 -3 10 -2 0 10 -1 10 -4 2 1 0.1 0.01 0.2 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
|
